Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors

Research Topics / 研究トピックス

An article written by Y. Miyauchi, S. Konabe, F. Wang, W. Zhang, A. Hwang, Y. Hasegawa, L. Zhou, S. Mouri, M. Toh, G. Eda, K. Matsuda was published in Nature Communications.
Title; Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
DOI: 10.1038/s41467-018-04988-x
2018 July 3
Advanced Energy Conversion Division, Advanced Energy Materials Research Section

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